个人简介

天津理工大学物理科学与技术学院教师，硕士生导师。2021年博士毕业于中国科学院物理研究所光学专业，同年入职天津理工大学，任物理系教师。长期从光电突触器件以及神经形态计算研究，在信息存储，图像提取和降噪，以及神经网络和深度学习方面取得多项成果。在Nano Energy, Advanced Materials, Advanced Electronic Materials，等期刊发表论文10余篇。

研究领域

    光电器件与神经形态计算研究

科研项目

1.国家自然科学基金青年科学基金项目（C类）， 铁电异质结光控可逆极化反转研究，2024-01至2026-12，主持；

代表论文、专利

1 J. Du, D. Xie, Q. Zhang, H. Zhong, F. Meng, X. Fu, Q. Sun, H. Ni, T. Li, E. Guo, H. Guo, M. He, C. Wang, L. Gu, X. Xu, G. Zhang, G. Yang, K. Jin, and C. Ge, “A robust neuromorphic vision sensor with optical control of ferroelectric switching,” Nano Energy 89, 106439 (2021).

2 J. Du, C. Ge, H. Riahi, E. Guo, M. He, C. Wang, G. Yang, and K. Jin, “Dual‐gated MoS2 transistors for synaptic and programmable logic functions,” Advanced Electronic Materials 6(5), 1901408 (2020).

3 J. Du, C. Ge, J. Xing, J. Li, K. Jin, J. Yang, H. Guo, M. He, C. Wang, and H. Lu, “Solar-blind ultraviolet photodetector based on (LaAlO3) 0.3-(SrAl0. 5Ta0. 5O3) 0.7 single crystal,” Aip Advances 7(3), (2017).

4 J. Du, J. Xing, C. Ge, H. Liu, P. Liu, H. Hao, J. Dong, Z. Zheng, and H. Gao, “Highly sensitive and ultrafast deep UV photodetector based on a β-Ga2O3 nanowire network grown by CVD,” Journal of Physics D: Applied Physics 49(42), 425105 (2016).

5 J. DU, and C. GE, “Recent progress in optoelectronic artificial synapse devices,” Journal of Inorganic Materials 38(4), 378–386 (2023).

6 Q. Wan, C. Wan, H. Wu, Y. Yang, X. Huang, P. Zhou, L. Chen, T.-Y. Wang, Y. Li, and K.-H. Xue, “2022 roadmap on neuromorphic devices and applications research in China,” Neuromorphic Computing and Engineering 2(4), 042501 (2022).

7 C. Ge, C. Liu, Q. Zhou, Q. Zhang, J. Du, J. Li, C. Wang, L. Gu, G. Yang, and K. Jin, “A ferrite synaptic transistor with topotactic transformation,” Advanced Materials 31(19), 1900379 (2019).

8 J. Yang, C. Ge, J. Du, H. Huang, M. He, C. Wang, H. Lu, G. Yang, and K. Jin, “Artificial synapses emulated by an electrolyte‐gated tungsten‐oxide transistor,” Advanced Materials 30(34), 1801548 (2018).

9 J. Yang, C. Ma, C. Ge, Q. Zhang, J. Du, J. Li, H. Huang, M. He, C. Wang, and S. Meng, “Effects of line defects on the electronic and optical properties of strain-engineered WO 3 thin films,” Journal of Materials Chemistry C 5(45), 11694–11699 (2017).

10 H. Huang, C. Ge, Q. Zhang, C. Liu, J. Du, J. Li, C. Wang, L. Gu, G. Yang, and K. Jin, “Electrolyte‐gated synaptic transistor with oxygen ions,” Advanced Functional Materials 29(29), 1902702 (2019).

11 X. Liu, L. Yan, S. Sun, J. Du, and S. Yin, “Fabrication of the Cu2S@ NiMn-LDH@ Co4S3 material with mixed-dimensional structures by in situ selective vulcanization for high-performance supercapacitors,” ACS Applied Energy Materials 8(14), 10071–10081 (2025).

12 J. Li, C. Ge, J. Du, C. Wang, G. Yang, and K. Jin, “Reproducible ultrathin ferroelectric domain switching for high‐performance neuromorphic computing,” Advanced Materials 32(7), 1905764 (2020).

13 Z. Yang, B. Lin, L. Wang, J. Du, and S. Sun, “Self-driven PbI2-based ultraviolet photodetectors with ultrafast response,” ACS Applied Electronic Materials 7(9), 4125–4132 (2025).

14 C. Ge, K. Jin, Q. Zhang, J. Du, L. Gu, H. Guo, J. Yang, J. Gu, M. He, and J. Xing, “Toward switchable photovoltaic effect via tailoring mobile oxygen vacancies in perovskite oxide films,” ACS Applied Materials & Interfaces 8(50), 34590–34597 (2016).

奖励与荣誉